In this work we propose the application of a radiation damage model based onthe introduction of deep level traps/recombination centers suitable for devicelevel numerical simulation of radiation detectors at very high fluences (e.g.1{\div}2 10^16 1-MeV equivalent neutrons per square centimeter) combined with asurface damage model developed by using experimental parameters extracted frommeasurements from gamma irradiated p-type dedicated test structures.
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